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禁带半导体紫外探测器
紫外探测技术在国防预警与跟踪、电力工业、环境监测及生命科学领域具有重要的应用，其核心器件是高性能的紫外光电探测器。
基于半导体材料的固态紫外探测器件具有体重小、功耗低、量子效率高、和便于集成等系列优势。以碳化硅（SiC）和III族氮化物为代表的宽禁带半导体是近年来国内外重点研究和发展的新型第三代半导体材料，具有禁带宽度大、导热性能好、电子饱和漂移速度高以及化学稳定性优等特点，用于制备紫外波段的光探测器件具有显著的材料性能优势。
我们实验室在宽禁带半导体紫外探测器领域具有较强的实力。率先在国内实现4H-SiC基紫外雪崩单光子探测器；分别研制成功高增益同质外延GaN基紫外雪崩光电探测器、国际上领先的高增益AlGaN基日盲雪崩光电探测器、具有极低暗电流的AlGaN基MSM日盲深紫外探测器、高量子效率AlGaN基PIN日盲深紫外探测器、以及现有芯片面积最大的AlGaN基日盲深紫外探测器，相关结果多次获得国际主流媒体的跟踪报导。
目前，我们的工作重点是研制高灵敏度宽禁带半导体紫外探测器，包括：紫外单光子探测器件结构设计和物理分析，紫外单光子探测线阵和日盲紫外探测阵列制备。
宽禁带半导体功率电子器件
针对未来高效电力管理系统、电动汽车和广泛军事应用大容量化、高密度化和高频率化的要求，将宽禁带半导体材料应用于高档次功率电子器件可以有效解决当今功率电子器件发展所面临的“硅极限”（silicon limit）问题，将大幅度降低电能转换过程中的无益损耗，在各领域创造可观的节能空间。宽禁带Ⅲ族氮化物半导体具有强击穿电场、高饱和漂移速度、高热导率和良好化学稳定性等系列材料性能优势，是制备新一代功率电子器件的理想材料。这一研究方向近年来成为国际上继GaN基发光二极管和微波功率器件之后的新兴研究热点。
我们小组在这一研究领域具有较好的基础，已经研制成功AlGaN/GaN平面功率二极管，其击穿电压大于1100V，功率优值系数高达280MW/cm2。为了进一步研制新型功率电子器件，我们将开展相应的低缺陷密度GaN厚膜外延生长、异质结与能带工程设计、功率器件强电场终端技术、和高功率器件的电接触物理与钝化技术研究等。
新型蓝光及紫外发光二极管与器件物理
以GaN基发光二极管（LED）为核心的半导体照明技术作为新兴的光源技术，具有节能、环保、长效等突出优势，具有极为广阔的市场前景和应用价值。但是，尽管近年来GaN基LED技术发展很快，所报道的最高发光效率已超过250lm/W，GaN基LED研究仍有很多基础的科学与技术问题没有解决。由于材料制备技术的不成熟以及大失配强极化材料体系中物理效应的复杂性，GaN基LED在总体性能上还存在很多问题，如漏电流高、光抽取效率低、以及大电流注入下发光效率发生明显降低（droop效应）等，而这些问题在AlGaN基深紫外LED和InGaN基绿光LED中尤为明显。
我们通过发展新型的同质外延生长技术、掺杂技术、以及量子阱调控技术，研制高量子效率的蓝光与紫外LED器件；通过对不同结构的LED器件进行系统的电学、光电、及可靠性测量，研究外延层晶体质量、器件结构、及工艺参数对器件性能的影响，分析器件中载流子的运行规律，解释器件中各种新奇物理效应的成因。
新型光子晶体LED的设计与研制是我们的研究重点。目前，影响LED发光效率的关键因素之一是光抽取效率偏低。当有源层内产生的光大于逃逸角锥的临界角时，会产生全内反射。由于氮化物半导体材料的折射率高，其临界角非常小，使得大部分光局限于半导体内部，最终被较厚的基板吸收。
我们可在萃取层刻蚀适当尺寸的二维（2D）光子晶体结构，以提供额外的倒格矢补偿光在出射面的波矢失配，使得局限在半导体内的部分光由导波模转变为高Q共振辐射模，或者与泄漏模耦合，从而逃逸至自由空间，提高LED的光萃取效率。
非晶氧化物半导体薄膜晶体管
以高分辨率、高动态范围、高对比度、高亮度及采用柔性透明基板等为主要特点的新一代显示技术已成为当今主要显示器生产商及相关科研机构的研究热点。以非晶In-Ga-Zn-O（a-IGZO）为代表的非晶氧化物半导体薄膜晶体管（AOS-TFT）具有驱动能力强、均一性和透明性好、工艺温度低以及成本适中等优点，不仅是当前实现高性能显示器的核心技术，在未来基于柔性透明存储、逻辑器件的系统面板（System on Panel）的研发中也有重要应用，因而极具研究价值和市场潜力。
然而，目前AOS-TFT在电、热、光等环境作用下的可靠性问题制约了其在先进显示领域的快速推广，器件性能发生退化的物理机制仍然众说纷纭。我们小组目前已建立起较为完整的用于AOS-TFT研究的器件制备及测试系统，通过研制新型的氧化物沟道材料、开发新的晶体管工艺流程、以及发展新的电学分析手段，旨在提高AOS-TFT的综合性能和稳定性，理解相关的深层次器件物理问题，并计划近一步研制基于AOS-TFT的逻辑电路。
新型人工微结构材料及光电器件
光电探测器的小型化对集成电路具有重要的意义。然而，主动层材料的有效面积减小必然带来光响应效率的降低。基于亚波长金属光栅结构的表面等离激元光电探测器，可以突破这一瓶颈。
我们可基于紫外或红外探测器，通过在金属电极中引入新型人工微结构，在吸收层与金属电极界面激发长程表面等离激化激元波或局域表面等离激元振荡，从而调控入射光的光场分布，提高光的吸收效率；同时由于外加电场与光场分布的较好重叠，光电转换效率可得到进一步的提高。
太赫兹主动式特异材料在国防、成像、传感和通讯等多个领域具有广阔的发展前景。目前，太赫兹（Terahertz ,THz）频段（0.1-10THz）的特异材料，无论是在基础物理研究方面，还是在功能器件实现方面，都未得到充分的研究和开发。
我们小组基于有限元技术（FEM）和时域有限差分方法（FDTD）, 从理论上设计非线性和主动式THz特异材料，研究电磁波与之相互作用的物理过程和新奇的物理效应，包括电响应和磁响应。同时，将新颖电磁特性和半导体电子学相结合，采用先进微加工技术，以Ⅲ-V化合物半导体为基底，通过设计和优化特异材料的共振结构单元，实现高效、宽带、超快响应的THz特异材料器件原型(开关、调制器等)，对THz辐射进行实时有效的操控。
(Journal papers published in 2016)
Yang, S., Zhou, D., Lu, H., Chen, D., Ren, F., Zhang, R., & Zheng, Y.4H-SiC pin Ultraviolet Avalanche Photodiodes Obtained by Al Implantation.IEEE Photonics Technology Letters, 28(11), 1185-1188,(2016).Yang, S., Zhou, D., Lu, H., Chen, D., Ren, F., Zhang, R., & Zheng, Y.High-Performance 4H-SiC pin Ultraviolet Photodiode With p Layer Formed by Al Implantation.IEEE Photonics Technology Letters, 28(11), 1189-1192,(2016).Li, L.H., Zhou, D., Liu, F., Lu, H., Ren, F., Chen, D., Zhang, R., & Zheng, Y.High Fill-Factor 4H-SiC Avalanche Photodiodes With Partial Trench Isolation.IEEE Photonics Technology Letters, 28(22), 2526-2528,(2016).Xu, W.Z., Ren, F.F., Ye, J., Lu, H., Liang, L., Huang, X., Liu, M., Shadrivov, I.V., Powel, D.A., Yu, G., Jin, B, Zhang, R.Zheng, Y., Tan, H.H., & Jagadish, C.Electrically tunable terahertz metamaterials with embedded large-area transparent thin-film transistor arrays.Scientific Reports, 6:23486,(2016).Cai, X.L., Zhou, D., Yang, S., Lu, H., Chen, D., Ren, F., Zhang, R., & Zheng, Y.4H-SiC SACM Avalanche Photodiode With Low Breakdown Voltage and High UV Detection Efficiency.IEEE Photonics Journal, 8(5), 1-7,(2016).Qian, H.M., Wu, C., Lu, H., Xu, W., Zhou, D., Ren, F., Chen, D., Zhang, R., & Zheng, Y.Bias stre instability involving subgap state transitions in a-IGZO Schottky barrier diodes.Journal of Physics D: Applied Physics, 49(39), 395104,(2016).Chen, Y.F., Lu, H., Chen, D., Ren, F., Zhang, R., & Zheng, Y.High-voltage photoconductive semiconductor switches fabricated on semi-insulating HVPE GaN:Fe template.Physica Status Solidi(c), 13(5-6), 374-377,(2016).Wu, C.F., Chen, Y.F., Lu, H., Huang, X.M., Ren, F.F., Chen, D.J, Zhang, R., & Zheng, Y.D.Contact resistance asymmetry of amorphous indium-gallium-zinc-oxide thin-film transistors by scanning Kelvin probe microscopy.Chinese Physics B, 25(5), 057306,(2016).Tang, L.F., Lu, H., Ren, F.F., Zhou, D., Zhang, R., Zheng, Y.D., & Huang, X.M.Electrical Instability of Amorphous-Indium-Gallium-Zinc-Oxide Thin-Film Transistors under Ultraviolet Illumination.Chinese Physics Letters, 33(3), 038502,(2016).Zhang, G.G., Guo, X., Ren, F.F., Li, Y., Liu, B., Ye, J., Ge, H., Xie, Z., Zhang, R., Tan, H.H., & Jagadish, C.High-Brightne Polarized Green InGaN/GaN Light-Emitting Diode Structure with Al-Coated p-GaN Grating.ACS Photonics, 3(10), 1912-1918,(2016).Chang, J., Chen, D., Yang, L., Liu, Y., Dong, K., Lu, H., Zhang, R., & Zheng, Y.High-Quality Crystal Growth and Characteristics of AlGaN-Based Solar-Blind Distributed Bragg Reflectors with a Tri-layer Period Structure.Scientific Reports, 6:29571,(2016).Chang, J., Chen, D., Xue, J., Dong, K., Liu, B., Lu, H., Zhang, R., & Zheng, Y.AlGaN-Based Multiple Quantum Well Deep Ultraviolet Light-Emitting Diodes With Polarization Doping.IEEE Photonics Journal, 8(1), 1-7,(2016).Liu, Y., Chen, D., Yang, L., Lu, H., Zhang, R., & Zheng, Y.A method of applying compreive pre-stre to AlGaN barrier in AlGaN/GaN heterostructures by depositing an additional thermally mismatched dielectric.Physica Status Solidi(a), 213(9), 2474-2478,(2016).(Journal papers published in 2015)
Dawei Yan, Jian Ren, Guofeng Yang, Shaoqing Xiao, Xiaofeng Gu, Hai Lu, “Surface Acceptor-Like Trap Model for Gate Leakage Current Degradation in Lattice-Matched InAlN/GaN HEMTs,” IEEE Electron Device Letters, vol.36, no.12, pp.1281-1283, 2015.Yunfeng Chen, Hai Lu, Dunjun Chen, Fangfang Ren, Dong Zhou, Rong Zhang, Youdou Zheng, “Demonstration of an AlGaN-based solar-blind high-voltage photoconductive switch,” Journal of Vacuum Science & Technology B, vol.33, no.4, pp.040601, 2015.Yisong Xu, Dong Zhou, Hai Lu, Dunjun Chen, Fangfang Ren, Rong Zhang, Youdou Zheng, “High-temperature and reliability performance of 4H-SiC Schottky-barrier photodiodes for UV detection,” Journal of Vacuum Science & Technology B, vol.33, no.4, pp.040602, 2015.Chenfei Wu, Xiaoming Huang, Hai Lu, Guang Yu, Fangfang Ren, Dunjun Chen, Rong Zhang, Youdou Zheng, “Study on interface characteristics in amorphous indium-gallium-zinc oxide thin-film transistors by using low-frequency noise and temperature dependent mobility measurements,” Solid-State Electronics.vol.109, pp.37-41, 2015.Hui-Min Qian, Guang Yu, Hai Lu, Chen-Fei Wu, Lan-Feng Tang, Dong Zhou, Fang-Fang Ren, Rong Zhang, You-Dou Zheng, Xiao-Ming Huang, “Temperature-dependent bias-stre-induced electrical instability of amorphous indium-gallium-zinc-oxide thin-film transistors,” Chinese Physics B, vol.24, no.7, pp.077307, 2015.Lan-Feng Tang, Guang Yu, Hai Lu, Chen-Fei Wu, Hui-Min Qian, Dong Zhou, Rong Zhang, You-Dou Zheng, Xiao-Ming Huang, “Influence of white light illumination on the performance of a-IGZO thin film transistor under positive gate-bias stre,” Chinese Physics B, vol.24, no.8, pp.088504, 2015.Guang Yu, Chen-Fei Wu, Hai Lu, Fang-Fang Ren, Rong Zhang, You-Dou Zheng, Xiao-Ming Huang, “Frequency Performance of Ring Oscillators Based on a-IGZO Thin-Film Transistors,” Chinese Physics Letters, vol.32, no.4, pp.047302, 2015.Xiaoming Huang, Chenfei Wu, Hai Lu, Fangfang Ren, Hongbo Zhu, Yongjin Wang, “The Effect of Oxygen Partial Preure during Active Layer Deposition on Bias Stability of a-InGaZnO TFTs,” Chinese Physics Letters, vol.32, no.7, pp.077303, 2015.Fei Liu, Sen Yang, Dong Zhou, Hai Lu, Rong Zhang, You-Dou Zheng, “Discrimination Voltage and Overdrive Bias Dependent Performance Evaluation of Paively Quenched SiC Single-Photon-Counting Avalanche Photodiodes,” Chinese Physics Letters, vol.32, no.8, pp.088503, 2015.Fei Liu, Dong Zhou, Hai Lu, Dunjun Chen, Fangfang Ren, Rong Zhang, Youdou Zheng, “Paive Quenching Electronics for Geiger Mode 4H-SiC Avalanche Photodiodes,” Chinese Physics Letters, vol.32, no.12, pp.128501, 2015.(Journal papers published in 2014)
Xiaoming Huang, Chenfei Wu, Hai Lu, Fangfang Ren, Dunjun Chen, Yanli Liu, Guang Yu, Rong Zhang, Youdou Zheng, Yongjin Wang, “Large-Swing a-IGZO Inverter With a Depletion Load Induced by Laser Annealing.” IEEE Electron Device Letters, vol.35, no.10, pp.1034-1036, 2014.Weizong Xu, Lihua Fu, Hai Lu, Dunjun Chen, Fangfang Ren, Rong Zhang, Youdou Zheng, Ke Wei, Xinyu Liu, “Off-state Breakdown and Leakage Current Transport Analysis of AlGaN/GaN High Electron Mobility Transistors.” Microelectronics Reliability, vol.54, no.11, pp.2406-2409, 2014.Tian-Jiao Wang, Wei-Zong Xu, Hai Lu, Fang-Fang Ren, Dun-Jun Chen, Rong Zhang, You-Dou Zheng, “Solar-blind ultraviolet band-pa filter based on metal-dielectric multilayer structures.” Chinese Physics B, vol.23, no.7, pp.074201, 2014.Chao Jiang, Hai Lu, Dun-Jun Chen, Fang-Fang Ren, Rong Zhang, You-Dou Zheng, “Breakdown characteristics of AlGaN/GaN Schottky barrier diodes fabricated on a silicon substrate.” Chinese Physics B, vol.23, no.9, pp.097308, 2014.Fang-Fang Ren, Wei-Zong Xu, Jiandong Ye, Kah-Wee Ang, Hai Lu, Rong Zhang, Mingbin Yu, Guo-Qiang Lo, Hark Hoe Tan, Chennupati Jagadish, “Second-order surface-plasmon aisted responsivity enhancement in germanium nano-photodetectors with bull's eye antennas.” Optical Expre, vol.22, no.13, pp.15949-15956, 2014.Dong Zhou, Fei Liu, Hai Lu, Dunjun Chen, Fangfang Ren, Rong Zhang, Youdou Zheng, “High-Temperature Single Photon Detection Performance of 4H-SiC Avalanche Photodiodes.” IEEE Photonics Technology Letters, vol.26, no.11, pp.1136-1138, 2014.Yunfeng Chen, Hai Lu, Guosheng Wang, Dunjun Chen, Fangfang Ren, Rong Zhang, Youdou Zheng, “Metal-semiconductor-metal ultraviolet photodetectors directly fabricated on semi-insulating GaN:Fe template grown by hydride vapor phase epitaxy.” Sensors and Actuators A, vol.216, no.1, pp.308–311, 2014.Rong Jiang, Dawei Yan, Hai Lu, Rong Zhang, Dunjun Chen, Youdou Zheng, “Reverse leakage current in AlGaN-based ultraviolet light-emitting diodes.” CHINESE SCIENCE BULLETIN, vol.59, no.12, pp.1276-1279, 2014.Zhenguang Shao, Dunjun Chen, Hai Lu, Rong Zhang, Dapeng Cao, Wenjun Luo, Youdou Zheng, Liang Li, Zhonghui Li, “High-Gain AlGaN Solar-Blind Avalanche Photodiodes.” IEEE Electron Device Letters, vol.35, no.3, pp.372-374, 2014.Xiaofeng Wang, Zhenguang Shao, Dunjun Chen, Hai Lu, Rong Zhang, Youdou Zheng, “Forward Current Transport Mechanisms of Ni/Au-InAlN/AlN/GaN Schottky Diodes.” Chinese Physics Letters, vol.31, no.5, pp.057303, 2014.(Journal papers published in 2013)
G.S.Wang, H.Lu, D.J.Chen, R.Zhang, and Y.D.Zheng, “High quantum efficiency GaN-based p-i-n photodetectors prepared on patterned sapphire substrates,” IEEE Photon.Technol.Lett., vol.25, no.7, pp.652, 2013.Fang-Fang Ren, Jiandong Ye, Hai Lu, Rong Zhang, and Youdou Zheng;“Spectrum broadening of high-efficiency second harmonic generation in cascaded photonic crystal microcavities” Optics Expre, vol.21, no.1, pp.756, 2013.Xiaoming Huang, Chenfei Wu, Hai Lu, Fangfang Ren, Dunjun Chen, Rong Zhang, and Youdou Zheng, “Enhanced bias stre stability of amorphous indium-gallium-zinc oxide thin film transistors by inserting ultra-thin InGaZnO:N layer at the channel /gate insulator interface.” Appl.Phys.Lett.vol.102, no.19, pp.193505, 2013.Xiaoming Huang, Chenfei Wu, Hai Lu, Fangfang Ren, Dunjun Chen, Qingyu Xu, Rong Zhang, Youdou Zheng, “Temperature and gate bias dependence of carrier transport mechanisms in amorphous indium-gallium-zinc oxide thin film transistors.” Solid-State Electronics.vol.86, pp.41, 2013.Yong Lei, Hai Lu, Dongsheng Cao, Dunjun Chen, Rong Zhang, Youdou Zheng;“Reverse leakage mechanism of Schottky barrier diode fabricated on homoepitaxial GaN” Solid-State Electronics vol.82, pp.63, 2013.ZHOU Dong, LU Hai, CHEN Dun-Jun, REN Fang-Fang, ZHANG Rong, ZHENG You-Dou, LI Liang;“Vacuum Violet Photo-Response of AlGaN-Based Metal-Semiconductor-Metal Photodetectors” Chin.Phys.Lett., vol.30, no.11, pp.117301, 2013.XU Wei-Zong, FU Li-Hua, LU Hai , REN Fang-Fang, CHEN Dun-Jun, ZHANG Rong, ZHENG You-Dou;“GaN Schottky Barrier Diodes with High-Resistivity Edge Termination Formed by Boron Implantation” Chinese Physics Letters, vol.30, no.5, pp.057301, 2013.Jiang Rong, Lu Hai, Chen Dun-Jun, Ren Fang-Fang, Yan Da-Wei, Zhang Rong, Zheng You-Dou;“Temperature-dependent efficiency droop behaviors of GaN-based green light-emitting diodes” Chin.Phys.B, vol.22, no.4, pp.047805, 2013.Wang Guosheng, Xie Feng, Lu Hai, Chen Dunjun, Zhang Rong, Zheng Youdou, Li Liang, Zhou Jianjun;“Performance comparison of front-and back-illuminated AlGaN-based metal-semiconductor-metal solar-blind ultraviolet photodetectors,” Journal of Vacuum Science & Technology B, vol.31, no.1, pp.011202, 2013.LIAN Hai-Feng,WANG Guo-Sheng, LU Hai, REN Fang-Fang, CHEN Dun-Jun, ZHANG Rong, ZHENG You-Dou;“High deep-ultraviolet quantum efficiency GaN p-i-n photodetectors with thin p-GaN contact layer ” Chinese Physics Letters, vol.30, no.1, pp.017302, 2013.Lili Zhang, Kexiu Dong, Dunjun Chen, Yanli Liu, Junjun Xue, Hai Lu, Rong Zhang and Youdou Zheng;“Solar-blind ultraviolet AlInN/AlGaN distributed Bragg reflectors” Appl.Phys.Lett.vol.102, no.24, pp.242112, 2013.Ke Xiu Dong, Dun Jun Chen, Hai Lu, Bin Liu, Ping Han, Rong Zhang, You Dou Zheng;“Exploitation of Polarization in Back-Illuminated AlGaN Avalanche Photodiodes” Photonics Technology Letters, vol.25, no.15, pp.1510, 2013.(Journal papers published in 2012)
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